ZENER TUNNELING IN SEMICONDUCTORS
ZENER TUNNELING IN SEMICONDUCTORS
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DOI：
10.1016/0022-3697(60)90035-4
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发表时间：
1959-01-01
影响因子：
4
通讯作者：
KANE, EO
中科院分区：
文献类型：
--
作者：
KANE, EO
在恒定磁场中的齐纳电流的计算与不带间耦合项的Wannier-Adams约化。在这两种情况下，齐纳电流只是略有不同，这一事实已经被Wannier注意到了。带间耦合的明显减少被解释为偏振校正。本文对适用于InSb的简单两带模型进行了详细的齐纳电流计算。隧道积分的评估密切遵循Keldysh的计算。
The Zener current in a constant field is calculated both with and without the Wannier-Adamsreduction of the interband-coupling terms. The Zener current is only slightly different in the two cases, a fact which has already been noted by Wannier. The apparent reduction of interband coupling is interpreted as a polarization correction. A detailed calculation of the Zener current is made for a simple two-band model which is applicable to InSb. The evaluation of the tunneling integral follows closely a calculation due to Keldysh.