Intraband Quantum Dot Barrier Devices - Optimization of Energy Level Alignment
Intraband Quantum Dot Barrier Devices - Optimization of Energy Level Alignment
复制标题
带内量子点势垒器件 - 能级对准的优化
DOI：
10.1149/10201.0045ecst
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发表时间：
2021
期刊：
影响因子：
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通讯作者：
Ko, Dong-Kyun
中科院分区：
文献类型：
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作者：
Hafiz, Shihab Bin;Al Mahfuz, Mohammad M.;Ko, Dong-Kyun
由带内胶体量子点构造的中红外势垒探测器带来了极大简化的器件制造过程的优点，具有高温操作的潜力。在这里，我们报告的制造和表征的垂直堆叠的Ag 2Se/PbS/Ag 2Se量子点势垒器件具有改善的红外响应度。通过优化能级排列，4.5 m响应率现在达到84.1 mA/W，与第一代量子点势垒器件相比，比探测率提高了570%。
Mid-infrared barrier detectors constructed from intraband colloidal quantum dots brings the advantage of greatly simplified device fabrication procedure with the potential for high temperature operation. Here, we report the fabrication and characterization of vertically-stacked Ag2Se/PbS/Ag2Se quantum dot barrier devices with improved infrared responsivity. Through optimizing the energy level alignment, 4.5 m responsivity now reaches 84.1 mA/W which results in 570% improvement in specific detectivity compared to the first generation quantum dot barrier devices.