Atom Probe Tomography Analysis of Boron and/or Phosphorus Distribution in Doped Silicon Nanocrystals
Atom Probe Tomography Analysis of Boron and/or Phosphorus Distribution in Doped Silicon Nanocrystals
复制标题
DOI：
10.1021/acs.jpcc.6b06197
复制
发表时间：
2016-08
影响因子：
3.7
通讯作者：
K. Nomoto;H. Sugimoto;A. Breen;A. Ceguerra;T. Kanno;S. Ringer;I. Wurfl;G. Conibeer;M. Fujii
中科院分区：
文献类型：
--
作者：
K. Nomoto;H. Sugimoto;A. Breen;A. Ceguerra;T. Kanno;S. Ringer;I. Wurfl;G. Conibeer;M. Fujii
硅纳米晶(SiNCs)由于具有能带工程等极具吸引力的特性，在光电子和生物领域得到了广泛的研究。虽然掺杂经常被用来控制光学和电学性质，但单掺杂和共掺杂的硅纳米管的相关结构性质还不是很清楚。在这项研究中，我们用原子探针层析(APT)技术研究了硼硅酸盐玻璃(BSG)、磷硅酸盐玻璃(PSG)和硼磷硅酸盐玻璃(BPSG)中的硅纳米碳化物中B和P的分布。我们比较了在不同温度下生长的单掺和共掺硅纳米管，以便比较共掺杂和温度对B和/或P分布的影响。邻近直方图和团簇分析表明，在Si NCS周围存在富B层，在Si NCS内部也存在B-P团簇。拉曼光谱还显示了固体中共掺杂的Si NCS和独立的共掺杂的Si NCS之间的结构变化。这些结果让我们了解到……
Silicon nanocrystals (Si NCs) are intensively studied for optoelectronic and biological applications due to having highly attractive features such as band engineering. Although doping is often used to control the optical and electrical properties, the related structural properties of solely doped and codoped Si NCs are not well-understood. In this study, we report the boron (B) and/or phosphorus (P) distribution in Si NCs embedded in borosilicate glass (BSG), phosphosilicate glass (PSG), and borophosphosilicate glass (BPSG) using atom probe tomography (APT). We compared solely and codoped Si NCs grown at different temperatures so that we may compare the effects of codoping and temperature on the B and/or P distribution. Proximity histograms and cluster analyses reveal that there exist boron-rich layers surrounding Si NCs and also B–P clusters within the Si NCs. Raman spectra also show a structural change between codoped Si NCs in solids and free-standing codoped Si NCs. These results lead us to understand...