Wet Chemical Cleaning of InP and InGaAs
Wet Chemical Cleaning of InP and InGaAs
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InP 和 InGaAs 的湿法化学清洗
DOI：
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发表时间：
2012
期刊：
影响因子：
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通讯作者：
P. Mertens
中科院分区：
文献类型：
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作者：
R. Vos;S. Arnauts;T. Conard;A. Moussa;H. Struyf;P. Mertens
在这项工作中，InP和InGaAs在半导体制造中常用的清洗液的兼容性进行了研究。应避免水性氧化清洗，因为基材溶解迅速。由于在III-V族材料的酸性水解时发生氢化物析出，低pH溶液可能造成一些严重的ES&H问题。然而，酸性溶液对于从衬底去除天然氧化物非常有效。由于这些材料在大气中的快速氧化，湿法清洗后不能实现完全无氧化物的表面。
In this work, the compatibility of InP and InGaAs in cleaning solutions commonly used in semiconductor manufacturing is investigated. Aqueous oxidizing cleans should be avoided as the substrates dissolve rapidly. Low pH solutions may impose some serious ES&H issues due to hydride evolution occurring upon acidic hydrolysis of the III-V material. However, acidic solutions are very efficient to remove the native oxide from the substrate. Complete oxide free surfaces are not achieved after wet cleaning due to the rapid oxidation of these materials in the atmosphere.