Facet-dependent growth of InAsP quantum wells in InP nanowire and nanomembrane arrays
Facet-dependent growth of InAsP quantum wells in InP nanowire and nanomembrane arrays
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InP 纳米线和纳米膜阵列中 InAsP 量子阱的面依赖性生长
DOI：
10.1039/d0nh00410c
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发表时间：
2020
影响因子：
9.7
通讯作者：
Tan Hark Hoe
中科院分区：
文献类型：
--
作者：
Yuan Xiaoming;Wang Naiyin;Tian Zhenzhen;Zhang Fanlu;Li Li;Lockrey Mark;He Jun;Jagadish Chennupati;Tan Hark Hoe
选区外延是一种功能强大的生长技术，已被用于制备用于光子和电子应用的III-V半导体纳米线和纳米膜阵列。量子阱(QWS)等异质结构的引入带来了新的功能，进一步拓宽了其应用范围。以InP纳米线和纳米膜为模板，研究了InAsP量子点在这些纯纤锌矿纳米结构上的生长情况。InAsP量子点在纳米线和纳米膜上轴向和横向生长，轴向形成闪锌矿相，侧壁形成纤锌矿相。在非极性的{100}侧壁上，径向量子线选择性地生长在位于轴向量子线的半极性&11>；A侧的一侧，导致纳米线的形状由六角形向三角形演变。对于具有{100}侧壁的纳米膜，径向量子阱在{100}面上不对称地生长，破坏了它们的对称性。相比之下，具有{110}侧壁的纳米膜是生长InAsP量子点的理想模板，这要归功于均匀的量子点的形成。这些量子线在室温下在近红外区有很强的发射，可以通过改变它们的厚度或成分来调节它们的发射。这些发现丰富了我们对量子阱生长的理解，为其他III-V纳米结构的异质结设计提供了新的见解。
Selective area epitaxy is a powerful growth technique that has been used to produce III–V semiconductor nanowire and nanomembrane arrays for photonic and electronic applications. The incorporation of a heterostructure such as quantum wells (QWs) brings new functionality and further broadens their applications. Using InP nanowires and nanomembranes as templates, we investigate the growth of InAsP QWs on these pure wurtzite nanostructures. InAsP QWs grow both axially and laterally on the nanowires and nanomembranes, forming a zinc blende phase axially and wurtzite phase on the sidewalls. On the non-polar {100} sidewalls, the radial QW selectively grows on one sidewall which is located at the semi-polar <11> A side of the axial QW, causing the shape evolution of the nanowires from hexagonal to triangular cross section. For nanomembranes with {100} sidewalls, the radial QW grows asymmetrically on the {100} facet, destroying their symmetry. In comparison, nanomembranes with {110} sidewalls are shown to be an ideal template for the growth of InAsP QWs, thanks to the uniform QW formation. These QWs emit strongly in the near IR region at room temperature and their emission can be tuned by changing their thickness or composition. These findings enrich our understanding of the QW growth, which provides new insights for heterostructure design in other III–V nanostructures.