Highly-mismatched InAs/InSe heterojunction diodes
Highly-mismatched InAs/InSe heterojunction diodes
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DOI：
10.1063/1.4967381
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发表时间：
2016-11
影响因子：
4
通讯作者：
A. Velichko;Z. Kudrynskyi;D. M. D. Paola-D.-M.-D.-Paola-93378100;O. Makarovsky;M. Kesaria;A. Krier;I. Sandall;C. Tan;Z. Kovalyuk;A. Patané
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文献类型：
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作者：
A. Velichko;Z. Kudrynskyi;D. M. D. Paola-D.-M.-D.-Paola-93378100;O. Makarovsky;M. Kesaria;A. Krier;I. Sandall;C. Tan;Z. Kovalyuk;A. Patané
我们报道了通过剥离和直接机械转移p型InSe薄膜到n型InAs外延层上制备的异质结二极管。结果表明，尽管器件层具有不同的晶体结构和较大的晶格失配(∼34%)，但结仍表现出整流行为，其室温整流比为∼10~4，在近红外和可见光光谱范围内具有宽带光响应。
We report on heterojunction diodes prepared by exfoliation and direct mechanical transfer of a p-type InSe thin film onto an n-type InAs epilayer. We show that despite the different crystal structures and large lattice mismatch (∼34%) of the component layers, the junctions exhibit rectification behaviour with rectification ratios of ∼104 at room temperature and broad-band photoresponse in the near infrared and visible spectral ranges.