An easy-to-use FET DRO design procedure suited to most CAD programs

An easy-to-use FET DRO design procedure suited to most CAD programs
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易于使用的 FET DRO 设计程序,适合大多数 CAD 程序

DOI:
10.1109/mwsym.1989.38899
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发表时间:
1989
期刊:
IEEE MTT-S International Microwave Symposium Digest
影响因子:
--
通讯作者:
R. Carver
R. Carver
中科院分区:
--
文献类型:
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作者:
P. G. Wilson;R. Carver

文献摘要

被引文献

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本文给出了一种反射稳定介质谐振器振荡器(DRO)的设计方法,它利用了大多数线性微波CAD(计算机辅助设计)程序的优点,从而简化了设计工作。该方法用于设计27.61 GHz MESFET混合型DRO,平均输出功率为+3 dBm,在-20 ℃至+40 ℃范围内稳定性为+或-2 MHz,在10 kHz载波处相位噪声为-75 dBc/Hz。该电路已被设计为可转移到GaAs的修改很少。&lt;<ETX>&gt;
A design procedure for a reflection-stabilized dielectric resonator oscillator (DRO) is given that takes advantage of the facilities available from most linear microwave CAD (computer-aided design) programs, hence streamlining and simplifying the task. The method was used to design 27.61-GHz MESFET hybrid DROs with an average output power of +3 dBm, +or-2-MHz stability from -20 to +40 degrees C, and -75 dBc/Hz phase noise at 10 kHz from carrier. The circuit has been designed to be transferable to GaAs with few modifications.<<ETX>>