An easy-to-use FET DRO design procedure suited to most CAD programs
An easy-to-use FET DRO design procedure suited to most CAD programs
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易于使用的 FET DRO 设计程序,适合大多数 CAD 程序
DOI:
10.1109/mwsym.1989.38899
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发表时间:
1989
期刊:
影响因子:
--
通讯作者:
R. Carver
中科院分区:
文献类型:
--
作者:
P. G. Wilson;R. Carver
A design procedure for a reflection-stabilized dielectric resonator oscillator (DRO) is given that takes advantage of the facilities available from most linear microwave CAD (computer-aided design) programs, hence streamlining and simplifying the task. The method was used to design 27.61-GHz MESFET hybrid DROs with an average output power of +3 dBm, +or-2-MHz stability from -20 to +40 degrees C, and -75 dBc/Hz phase noise at 10 kHz from carrier. The circuit has been designed to be transferable to GaAs with few modifications.<<ETX>>