Semiconducting polymer blends that exhibit stable charge transport at high temperatures
Semiconducting polymer blends that exhibit stable charge transport at high temperatures
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DOI：
10.1126/science.aau0759
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发表时间：
2018-12-07
期刊：
影响因子：
56.9
通讯作者：
Mei, Jiangno
中科院分区：
文献类型：
--
作者：
Gumyusenge, Aristide;Tran, Dung T.;Mei, Jiangno
虽然高温操作（即，超过150摄氏度）对于许多电子应用是非常感兴趣的，但是在高温下实现有机半导体的稳定载流子迁移率从根本上来说是具有挑战性的。我们报告了一种制备热稳定的高温半导体聚合物共混物的一般策略，该共混物由互穿半结晶共轭聚合物和高玻璃化转变温度绝缘基体组成。当适当设计时，这种聚合物共混物显示出温度不敏感的电荷传输行为，在薄膜晶体管中，在从室温到220摄氏度的宽温度范围内空穴迁移率超过2.0 cm（2）/V.s。
Although high-temperature operation (i.e., beyond 150 degrees C) is of great interest for many electronics applications, achieving stable carrier mobilities for organic semiconductors at elevated temperatures is fundamentally challenging. We report a general strategy to make thermally stable high-temperature semiconducting polymer blends, composed of interpenetrating semicrystalline conjugated polymers and high glass-transition temperature insulating matrices. When properly engineered, such polymer blends display a temperature-insensitive charge transport behavior with hole mobility exceeding 2.0 cm(2)/V.s across a wide temperature range from room temperature up to 220 degrees C in thin-film transistors.