The effects of fixed bulk charge on the thermal noise in metal-oxide-semiconductor transistors
The effects of fixed bulk charge on the thermal noise in metal-oxide-semiconductor transistors
复制标题
固定大量电荷对金属氧化物半导体晶体管热噪声的影响
DOI：
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发表时间：
1966
期刊：
影响因子：
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通讯作者：
F. Hielscher
中科院分区：
文献类型：
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作者：
C. Sah;S. Y. Wu;F. Hielscher
通过包含来自半导体衬底中电离杂质的体电荷，将由于沟道电导波动引起的热噪声理论扩展到具有栅极电压感应沟道结构的绝缘栅（MOS）场效应晶体管。在漏极特性的饱和范围内，理论表明R_{gns} g_{ms} geq 2/3 ，其中等式条件对应于先前获得的本征或化学纯半导体衬底的结果。对于具有薄氧化物（2000A）或厚氧化物（6200 和 8400A）栅极的 P 沟道和 N 沟道硅器件，理论与实验测量之间具有令人满意的相关性。
The theory of the thermal noise due to channel conductance fluctuation is extended for insulated gate (MOS) field effect transistors with the gate voltage induced channel structure by including the bulk charge from the ionized impurities in the semiconductor substrate. In the saturation range of the drain characteristics, the theory shows that R_{gns} g_{ms} geq 2/3 , where the equality condition corresponds to the previously obtained result for an intrinsic or chemically pure semiconductor substrate. Satisfactory correlations between theory and experimental measurements are obtained for both P-channel and N-channel silicon devices with either a thin oxide (2000A) or a thick oxide (6200 and 8400A) gate.