Shaping switching waveforms in a 650 V GaN FET bridge-leg using 6.7 GHz active gate drivers
Shaping switching waveforms in a 650 V GaN FET bridge-leg using 6.7 GHz active gate drivers
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DOI：
10.1109/apec.2017.7930970
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发表时间：
2017-05
期刊：
影响因子：
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通讯作者：
Jeremy J. O. Dalton;Jianjing Wang;H. Dymond;Dawei Liu;D. Pamunuwa;B. Stark;N. McNeill;S. Hollis
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文献类型：
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作者：
Jeremy J. O. Dalton;Jianjing Wang;H. Dymond;Dawei Liu;D. Pamunuwa;B. Stark;N. McNeill;S. Hollis
先前已经证明，将有源栅极驱动应用于40 V GaN FET可以减少开关节点电压波形中的振铃和EMI生成频谱内容。本文首次展示了应用于650 V GaN FET的有源栅极驱动，以及开关瞬态过程中器件电压和电流的成形。采用定制的集成有源栅极驱动器，其输出电阻可在0.12至64 Ω范围内动态变化，时序分辨率为150 ps。在200 V直流链路和10 A负载电流，一个显着程度的控制有源开关的漏极电流和开关节点电压被证明，降压和升压模式操作。由于电路寄生效应而导致的功率波形中的电流过冲和振铃被主动地减少，并且DC链路中的电压振荡被阻尼。电阻序列的时间被证明是至关重要的主动成形方法的成功，从而证明了无与伦比的150 ps分辨率的驱动程序。在连续操作和在100 V和2 A的负载电流的额定值降低的开关节点电压和电压谱的显着控制也被证明。开关延迟减少，部分频谱减少高达9 dB，相当于栅极电阻增加三倍的效果，但不会降低整体开关速度。
The application of active gate driving to 40 V GaN FETs has previously been shown to reduce ringing and EMI-generating spectral content in the switch-node voltage waveforms. This paper, for the first time, shows active gate driving applied to 650 V GaN FETs, and the shaping of device voltages and currents during switching transients. A custom integrated active gate driver is used, which can dynamically vary its output resistance from 0.12 to 64 Ω, with a 150 ps timing resolution. At 200 V DC link and 10 A load current, a significant degree of control over the active-switch drain current and switch-node voltage is demonstrated, for both buck and boost mode operation. The current overshoot and ringing in the power waveforms due to circuit parasitics are actively reduced and the voltage oscillations in the DC link are damped. The timing of resistance sequences is shown to be critical to the success of active shaping methods, thus justifying the unparalleled 150 ps resolution of the driver. Under continuous operation and at reduced ratings of 100 V and 2 A load current the significant control of the switch node voltage and voltage spectra is also demonstrated. The switching delay is reduced, and parts of the spectrum are reduced by up to 9 dB, equivalent to the effect of tripling the gate resistance but without any reduction in the overall switching speed.