Atomic Layer Deposition of Silica on Carbon Nanotubes

Atomic Layer Deposition of Silica on Carbon Nanotubes
复制标题

DOI:
10.1021/acs.chemmater.7b01165
复制
发表时间:
2017-06
影响因子:
8.6
通讯作者:
M. Karg;K. S. Lokare;C. Limberg;G. Clavel;N. Pinna
M. Karg;K. S. Lokare;C. Limberg;G. Clavel;N. Pinna
中科院分区:
材料科学2区
文献类型:
--
作者:
M. Karg;K. S. Lokare;C. Limberg;G. Clavel;N. Pinna

文献摘要

相似文献

利用臭氧辅助的四种硅烷衍生物(3-氨基丙基三乙氧基硅烷(APTES)、二(二乙氨基)硅烷(BDEAS)、二苯氨基硅烷(DPAs)和三乙基硅烷(DPAs))在碳纳米管(CNTs)上的低温原子层沉积(ALD),一步形成了SiO_2纳米管。在这一过程中,碳纳米管充当模板,并在正在进行的沉积过程中被移除。从透射电子显微镜图像中观察到,在碳纳米管表面和二氧化硅涂层之间形成了一个空洞,这表明碳从碳纳米管中意外地被去除。这一差距随着ALD循环次数的增加而增大,最终导致二氧化硅纳米管几乎没有碳。ATR-IR和EELS光谱证实了SiO_2的形成。根据碳纳米管模板的不同,可以得到不同形貌的一维SiO_2纳米结构,包括简单的纳米管、空壁纳米管、管中管式结构和SiO_2纳米线。介绍了该工艺在垂直排列碳纳米管上的应用。
Low-temperature ozone-assisted atomic layer deposition (ALD) of SiO2 with four silane derivatives (3-aminopropyl)triethoxysilane (APTES), bis(diethylamino)silane (BDEAS), diphenylaminosilane (DPAS), and triethylsilane on carbon nanotubes (CNTs) leads to the one step formation of SiO2 nanotubes. In the process, CNTs act as templates and are removed during the ongoing deposition. From transmission electron microscopy images, the formation of a void between the CNTs surface and the SiO2 coating was observed, indicating an unexpected removal of carbon from the CNTs. This gap grows as the number of ALD cycles is increased, eventually leading to SiO2 nanotubes almost free of carbon. ATR-IR and EELS spectra proved the SiO2 formation. Depending on the CNTs templates used in this process, different morphologies of one-dimensional SiO2 nanostructures are obtained, including simple nanotubes, hollow wall nanotubes, tube-in-tube structures, and SiO2 nanowires. The application of this process on vertically aligned CNT...