Influence of Irradiation on Defect Spin Coherence in Silicon Carbide
Influence of Irradiation on Defect Spin Coherence in Silicon Carbide
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DOI：
10.1103/physrevapplied.13.044054
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发表时间：
2020-04-21
影响因子：
4.6
通讯作者：
Astakhov, G., V
中科院分区：
文献类型：
--
作者：
Kasper, C.;Klenkert, D.;Astakhov, G., V
碳化硅（SiC）中的辐照诱导晶格缺陷已经超过了它们以前的声誉，纯粹是性能抑制。由于它们具有显著的量子特性，例如长的室温自旋相干性和缩小到单光子源水平的可能性，它们已被证明是众多量子信息应用的有希望的候选者。任何量子系统最关键的参数之一是它的量子相干性可以保持多久。利用脉冲光探测磁共振（ODMR）技术，研究了中子、电子和质子辐照4 H-SiC中硅空位的自旋-晶格弛豫时间（T-1）和自旋-相干时间（T-2）。我们还研究了辐照能量和样品退火的效果。我们建立了对所有类型的照射的T-1时间的鲁棒性，并揭示了T-2时间与发射体密度的普遍缩放。我们的研究结果可用于优化特定任务中SiC中硅空位量子比特的相干特性。
Irradiation-induced lattice defects in silicon carbide (SiC) have already exceeded their previous reputation as purely performance inhibiting. With their remarkable quantum properties, such as long room-temperature spin coherence and the possibility of downscaling to single-photon-source level, they have proven to be promising candidates for a multitude of quantum-information applications. One of the most crucial parameters of any quantum system is how long its quantum coherence can be preserved. By using the pulsed optically detected magnetic resonance (ODMR) technique, we investigate the spin-lattice relaxation time (T-1) and spin-coherence time (T-2) of silicon vacancies in 4H-SiC created by neutron, electron, and proton irradiation in a broad range of fluences. We also examine the effect of irradiation energy and sample annealing. We establish a robustness of the T-1 time against all types of irradiation and reveal a universal scaling of the T-2 time with the emitter density. Our results can be used to optimize the coherence properties of silicon-vacancy qubits in SiC for specific tasks.