Recombination sources in p-type high performance multicrystalline silicon
Recombination sources in p-type high performance multicrystalline silicon
复制标题
p型高性能多晶硅中的复合源
DOI：
10.7567/jjap.56.08mb16
复制
发表时间：
2017
影响因子：
1.5
通讯作者：
D. Macdonald
中科院分区：
文献类型：
--
作者：
H. Sio;S. Phang;P. Zheng;Quanzhi Wang;Wei Chen;Hao Jin;D. Macdonald
本文介绍了一种工业生长的p型高性能多晶硅锭的电子性能的综合评估。从锭的不同位置的晶片进行分析，在磷扩散和氢化之前和之后的材料质量，以及它们的最终电池性能。除了寿命测量，我们采用最近开发的技术成像的结构缺陷的复合速度。我们的研究结果表明，磷吸杂有利于晶粒内区域，但也激活晶界，导致平均寿命的减少。氢化可以显着提高整体寿命，主要是由于其钝化晶界的能力。位错团在所有过程后仍保持强烈的复合活性。发现最终电池效率与沿锭沿着变化的材料质量一致。晶片对锭顶部的位错簇载流子复合的影响更大，而晶片附近的底部更受其较低的晶粒内寿命和更大的复合活性晶界密度的组合。
This paper presents a comprehensive assessment of the electronic properties of an industrially grown p-type high performance multicrystalline silicon ingot. Wafers from different positions of the ingot are analysed in terms of their material quality before and after phosphorus diffusion and hydrogenation, as well as their final cell performance. In addition to lifetime measurements, we apply a recently developed technique for imaging the recombination velocity of structural defects. Our results show that phosphorus gettering benefits the intra-grain regions but also activates the grain boundaries, resulting in a reduction in the average lifetimes. Hydrogenation can significantly improve the overall lifetimes, predominantly due to its ability to passivate grain boundaries. Dislocation clusters remain strongly recombination active after all processes. It is found that the final cell efficiency coincides with the varying material quality along the ingot. Wafers toward the ingot top are more influenced by carrier recombination at dislocation clusters, whereas wafers near the bottom are more affected by a combination of their lower intra-grain lifetimes and a greater density of recombination active grain boundaries.