Electronic structure and optical properties of 1.55 µm emitting InAs/InGaAsP quantum dash tunnel injection structures
Electronic structure and optical properties of 1.55 µm emitting InAs/InGaAsP quantum dash tunnel injection structures
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1.55 µm 发射 InAs/InGaAsP 量子短跑隧道注入结构的电子结构和光学特性
DOI：
10.1088/0268-1242/27/10/105015
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发表时间：
2012
影响因子：
1.9
通讯作者：
B. Rousseau
中科院分区：
文献类型：
--
作者：
Wojciech Rudno‐Rudziński;G. Sȩk;J. Andrzejewski;J. Misiewicz;F. Lelarge;B. Rousseau
光谱学研究报告了一个与应用相关的系统，发射波长为1.55微米，由InGaAsP注入器量子井(QW)组成，由一层薄的InP势垒(不同厚度)与称为量子短划线(QDash)的InAs细长量子点隔开。所研究的系统构成隧道注入结构，其工作原理是通过隧道传输的方式将被注入器捕获的载流子转移到QDash层。在具有真实DASH几何结构的八带KP模型中进行了数值计算，以确定受限能级的能量及其波函数，然后通过与测量的光反射光谱的比较来验证结果，并用于解释光谱结果。光致发光激发测量证明了载流子从量子阱到量子短程层的隧穿，并进一步支持了光致发光峰展宽的异常温度行为。对限制态及其波函数的仔细数值分析解释了所研究样品的光学性质。给出了基于载流子注入的结构在电信激光器中应用的合理设计建议；最重要的是，必须注意使量子波不会对DASH发射体产生显着影响。
Optical spectroscopy studies have been reported on an application-relevant system emitting at 1.55 µm and consisting of an InGaAsP injector quantum well (QW), separated by a thin InP barrier (of various thicknesses) from InAs elongated quantum dots called quantum dashes (QDash). The investigated systems constitute tunnel injection structures, whose operation principle is the transfer of carriers captured by the injector QW to the QDash layer by means of tunnelling. Numerical calculations in the eight-band kp model with a realistic dash geometry are used in order to determine the energies of confined levels and their wave functions, results of which are then verified by comparison with measured photoreflectance spectra and used to interpret spectroscopic findings. The tunnelling of carriers from QW to QDash layer is evidenced by photoluminescence excitation measurements and further supported by unusual temperature behaviour of PL peaks broadenings. Careful numerical analysis of confined states and their wave functions explains optical properties of investigated samples. The suggestions for the proper design of structures based on the injection of carriers for applications in telecom lasers are given; most importantly it is shown that care must be taken so that the QW does not significantly influence the dash emitter.