Elimination of remnant phases in low-temperature growth of wurtzite ScAlN by molecular-beam epitaxy
Elimination of remnant phases in low-temperature growth of wurtzite ScAlN by molecular-beam epitaxy
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DOI：
10.1063/5.0118075
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发表时间：
2022-11
影响因子：
3.2
通讯作者：
Brandon Dzuba;Trang Nguyen;Amrita Sen;R. Diaz;Megha Dubey;M. Bachhav;J. Wharry;M. Manfra;O. Malis
中科院分区：
文献类型：
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作者：
Brandon Dzuba;Trang Nguyen;Amrita Sen;R. Diaz;Megha Dubey;M. Bachhav;J. Wharry;M. Manfra;O. Malis
由于可能与残余相相关的缺陷，在高温下在 c 面 GaN 上通过等离子体辅助分子束外延生长纤锌矿 ScxAl1−xN (x < 0.23) 会显着改变材料的提取晶格常数。相比之下，在低于成分相关阈值温度生长的 ScAlN 表现出均匀的合金分布、降低的缺陷密度和原子台阶表面形态。正如之前的理论计算所预期，这种低温 ScAlN 的 c 面晶格常数随成分而变化，可用于可靠地估计合金成分。此外，在这些条件下生长的晶格匹配的Sc0.18Al0.82N/GaN多量子阱表现出强而窄的近红外子带间吸收线，证实了有利的光学和电子特性。
Growth of wurtzite ScxAl1−xN (x < 0.23) by plasma-assisted molecular-beam epitaxy on c-plane GaN at high temperatures significantly alters the extracted lattice constants of the material due to defects likely associated with remnant phases. In contrast, ScAlN grown below a composition-dependent threshold temperature exhibits uniform alloy distribution, reduced defect density, and atomic-step surface morphology. The c-plane lattice constant of this low-temperature ScAlN varies with composition as expected from previous theoretical calculations and can be used to reliably estimate alloy composition. Moreover, lattice-matched Sc0.18Al0.82N/GaN multi-quantum wells grown under these conditions display strong and narrow near-infrared intersubband absorption lines that confirm advantageous optical and electronic properties.