"Atomically Flat Germanium (111) Surface by Hydrogen Annealing"
"Atomically Flat Germanium (111) Surface by Hydrogen Annealing"
复制标题
“通过氢退火实现原子平坦的锗 (111) 表面”
DOI：
10.1149/05809.0201ecst
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发表时间：
2013
期刊：
影响因子：
--
通讯作者：
K. Nagashio and A. Toriumi
中科院分区：
文献类型：
--
作者：
T. Nishimura;S. Kabuyanagi;C. H. Lee;T. Yajima;K. Nagashio and A. Toriumi
在锗（Ge）MOSFET技术中，表面平坦化对于提高高载流子密度下的迁移率、改善栅极沟道的可靠性和非平面FET的形貌控制是严重关注的。本文对（111）取向的Ge衬底在350-750 ° C纯H2气氛下进行退火处理，用原子力显微镜分析了退火前后的表面结构和形貌。经500 ℃以上H2退火后，在表面观察到台阶和平台结构。台阶宽度可由初始表面的偏角控制在至少0.3 °以内。在100 × 100 nm处，单个平台的粗糙度均方根（RMS）约为0.05 nm，这几乎是我们的检测极限，这意味着H2退火Ge（111）上的单个平台是原子级平坦的。此外，即使初始表面粗糙度RMS有意增加到0.6 nm，原子级平坦的平台结构可以通过H2退火获得。
In germanium (Ge) MOSFET technology, surface planarization is a serious concern for mobility enhancement at high carrier density, reliability improvement of gate dielectrics and morphology control for non-planar FETs. In this work,(111)-oriented Ge substrates were annealed at 350-750 o C in pure H2 atmosphere, and the surface structure and morphology were analyzed with atomic force microscopy. A step and terrace structure was observed on the surface after the H2 annealing above 500 o C. The terrace width is controllable by the off-angle of the initial surface within 0.3 o at least. The roughness root mean square (RMS) at 100 x 100 nm on single terrace is~ 0.05 nm which is almost our detection limit, which implies that the single terrace on H2 annealed Ge (111) is atomically flat. Furthermore, even though the initial surface roughness RMS is intentionally increased up to 0.6 nm, atomically flat terrace structure could be obtained by the H2 annealing.