High Performance Pentacene Thin Film Transistors with a PVA Gate Dielectric
High Performance Pentacene Thin Film Transistors with a PVA Gate Dielectric
复制标题
具有 PVA 栅极电介质的高性能并五苯薄膜晶体管
DOI：
10.1080/15421400701548258
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发表时间：
2007
影响因子：
0.7
通讯作者：
K. Ohta
中科院分区：
文献类型：
--
作者：
T. Oyama;R. Ye;M. Baba;K. Ohta
制备了并五苯薄膜晶体管，并用PVA薄膜作为栅电介质进行了表征。最高工艺温度为70°C，相当于旋涂聚合物介质的烘烤温度。使用玻璃纤维和柔性聚酯薄膜作为基材。这些器件具有高性能的电学特性，并且工作在−5V的低工作电压下。在柔性衬底上获得了最高的场效应迁移率为2.6cm2/vs，最低的阈值电压为−1.7V。
Pentacene thin film transistors were fabricated and characterized with PVA thin films as a gate dielectric. The maximum process temperature was 70°C, which corresponds to a baking temperature of the spin-coated polymeric dielectric. Glass and flexible PET foils were used as substrates. Theses devices showed high performance electrical characteristics and worked at a low operating voltage of − 5 V. The highest field effect mobility of 2.6 cm2/Vs and the lowest threshold voltage of − 1.7 V were obtained on a flexible substrate.