Silicon isotope separation utilizing infrared multiphoton dissociation of Si2F6 irradiated with two-frequency CO2 laser lights
Silicon isotope separation utilizing infrared multiphoton dissociation of Si2F6 irradiated with two-frequency CO2 laser lights
复制标题
利用双频 CO2 激光照射 Si2F6 的红外多光子解离进行硅同位素分离
DOI：
10.1007/s00340-004-1642-z
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发表时间：
2004
期刊：
影响因子：
--
通讯作者：
S. Arai
中科院分区：
文献类型：
--
作者：
A. Yokoyama;H. Ohba;M. Hashimoto;K. Katsumata;H. Akagi;T. Ishii;A. Ohya;S. Arai
利用双频co2激光辐照si2f6的红外多光子解离（IRMPD）进行了硅同位素分离。双频激励法通过保持较高的富集系数提高了分离效率。例如，在966.23 cm-1光子（0.089 J/cm2）和954.55 cm-1光子（0.92 J/cm2）的100次脉冲同时辐照下，在si2f6解离40.0%的情况下，得到28si分数为99.4%的si2f6，而在954.55 cm-1（0.92 J/cm2）的单频辐照下，需要1000次脉冲才能在27.2%解离的情况下获得99.0%的28si。29si和30si的单步富集因子随着si2f6压力的增大而增大。这种增强的原因已经从与周围气体碰撞的旋转和振动弛豫的角度进行了讨论。
Silicon isotope separation has been performed utilizing the infrared multiphoton dissociation (IRMPD) of Si2F6irradiated with two-frequency CO2laser lights. The two-frequency excitation method improved the separation efficiency by keeping the high enrichment factors. For example, Si2F6with the28Si fraction of 99.4% was obtained at 40.0% dissociation of Si2F6after the simultaneous irradiation of 100 pulses with 966.23 cm-1photons (0.089 J/cm2) and 954.55 cm-1photons (0.92 J/cm2), while 1000 pulses were needed to obtain 99.0% of28Si at 27.2% dissociation in the case of single frequency irradiation at 954.55 cm-1(0.92 J/cm2). The single-step enrichment factors of29Si and30Si increased with increasing Si2F6pressure. The reason for this enhancement has been discussed in terms of the rotational and vibrational relaxations by collisions with ambient gases.