In situ annealing enhancement of the optical properties and laser device performance of InAs quantum dots grown on Si substrates.
In situ annealing enhancement of the optical properties and laser device performance of InAs quantum dots grown on Si substrates.
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DOI：
10.1364/oe.24.006196
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发表时间：
2016-03
期刊：
影响因子：
3.8
通讯作者：
J. Orchard;S. Shutts;A. Sobiesierski;Jiang Wu;M. Tang;Siming Chen;Q. Jiang;S. Elliott;R. Beanland;Huiyun Liu;P. Smowton;D. Mowbray
中科院分区：
文献类型：
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作者：
J. Orchard;S. Shutts;A. Sobiesierski;Jiang Wu;M. Tang;Siming Chen;Q. Jiang;S. Elliott;R. Beanland;Huiyun Liu;P. Smowton;D. Mowbray
在硅衬底上生长InAs/GaAs量子点(QD)结构的过程中增加了升温步骤(退火)，使其结构和光学性质以及激光器件性能有了显著的改善。这是由于位错滤光层(DFL)的效率提高；降低了到达有源区的Si/III-V界面上出现的位错密度。增加两个退火步骤，使在硅上发射的1.3μm量子点激光器的室温阈值电流降低了三倍以上。生长在Si上的结构的活动区具有0.17%的室温残余拉应变，这与生长温度的降温以及不同的Si和GaAs热膨胀系数是一致的。这种应变限制了在松弛发生之前可以生长的III-V材料的数量。
The addition of elevated temperature steps (annealing) during the growth of InAs/GaAs quantum dot (QD) structures on Si substrates results in significant improvements in their structural and optical properties and laser device performance. This is shown to result from an increased efficacy of the dislocation filter layers (DFLs); reducing the density of dislocations that arise at the Si/III-V interface which reach the active region. The addition of two annealing steps gives a greater than three reduction in the room temperature threshold current of a 1.3 μm emitting QD laser on Si. The active region of structures grown on Si have a room temperature residual tensile strain of 0.17%, consistent with cool down from the growth temperature and the different Si and GaAs thermal expansion coefficients. This strain limits the amount of III-V material that can be grown before relaxation occurs.