In situ observation of gas-source molecular beam epitaxy of silicon and germanium on Si(001)
In situ observation of gas-source molecular beam epitaxy of silicon and germanium on Si(001)
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Si(001)上硅、锗气源分子束外延原位观察
DOI：
10.1116/1.581200
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发表时间：
1998
期刊：
影响因子：
--
通讯作者：
G. Briggs
中科院分区：
文献类型：
--
作者：
I. Goldfarb;J. Owen;D. Bowler;C. Goringe;P. T. Hayden;K. Miki;D. Pettifor;G. Briggs
我们已经观察到的发展过程中的气体源生长的硅和锗的表面在一个升高的温度下的真空扫描隧道显微镜（STM），与近原子的分辨率下的温度和流量的范围内，这是两个主要参数，并应用原子模型的结构所看到的STM，使我们能够得到自信的解释结果。硅和锗分别从乙硅烷和锗烷在Si（001）上生长的关键作用由表面氢发挥。锗的生长遵循与硅的前几个单层类似的路径，之后应变通过周期性沟槽得到缓解，并最终通过多面凹坑和簇的组合得到缓解，这两者都在表面缺陷处非均匀地成核。理解这些过程对于控制自组装Ge/Si量子结构至关重要。
We have observed the development of the surfaces during gas-source growth of silicon and germanium in an elevated temperature ultrahigh vacuum scanning tunneling microscopy (STM), with near-atomic resolution under a range of temperature and flux, which are the two dominant parameters, and applied atomistic modeling to the structures seen by STM to enable us to give confident interpretation of the results. A key role in the growth of silicon and germanium on Si(001) from disilane and germane, respectively, is played by the surface hydrogen. The growth of germanium follows a similar path to that of silicon for the first few monolayers, after which the strain becomes relieved by periodic trenches, and eventually by a combination of faceted pits and clusters, both of which nucleate heterogeneously at surface defects. Understanding these processes is crucial to controlling the self-assembled Ge/Si quantum structures.