Large current modulation ratio up to 130% in a GaMnAs-based all-solid-state vertical spin metal-oxide-semiconductor field-effect transistor
Large current modulation ratio up to 130% in a GaMnAs-based all-solid-state vertical spin metal-oxide-semiconductor field-effect transistor
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大%20电流%20调制%20比率%20up%20to%20130%%20in%20a%20GaMnAs基%20全固态%20垂直%20旋转%20金属氧化物半导体%20场效应%20晶体管
DOI：
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发表时间：
2017
期刊：
影响因子：
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通讯作者：
Masaaki Tanaka
中科院分区：
文献类型：
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作者：
Toshiki Kanaki;Hiroki Yamasaki;Tomohiro Koyama;Daichi Chiba;Shinobu Ohya;Masaaki Tanaka
