Second-order topological phases protected by chiral symmetry
Second-order topological phases protected by chiral symmetry
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DOI：
10.1103/physrevb.100.235302
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发表时间：
2019-07
影响因子：
3.7
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中科院分区：
文献类型：
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我们研究了具有手征对称性的二阶拓扑绝缘子和半金属。我们研究了只受手征对称性保护的二维二阶拓扑绝缘体结构模型的拓扑相变。根据相变理论，我们提出了手征对称三维系统中具有平铰链带的二阶拓扑半金属和绝缘体。由具有手征对称性的堆叠的二维二阶拓扑绝缘体可以得到三维的二阶拓扑相。此外，我们还证明了三维二阶拓扑相中手征对称性的破缺使得具有手征铰链态的二阶拓扑绝缘体成为可能。我们还用晶格模型演示了二阶拓扑相。
We study second-order topological insulators and semimetals characterized by chiral symmetry. We investigate topological phase transitions of a model for construction of the two-dimensional second-order topological insulators protected only by chiral symmetry. By the theory of the phase transitions, we propose a second-order topological semimetal and insulators with flat hinge bands in chiral-symmetric three-dimensional systems. The three-dimensional second-order topological phases can be obtained from the stacked two-dimensional second-order topological insulators with chiral symmetry. Moreover, we show that broken chiral symmetry in the three-dimensional second-order topological phase allows a second-order topological insulator with chiral hinge states. We also demonstrate the second-order topological phases by using a lattice model.