Crystal structure of Ce-doped (La,Gd) 2 Si 2 O 7 grown by the Czochralski process
Crystal structure of Ce-doped (La,Gd) 2 Si 2 O 7 grown by the Czochralski process
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直拉法生长的 Ce 掺杂 (La,Gd) 2 Si 2 O 7 晶体结构
DOI：
10.1016/j.jallcom.2018.02.286
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发表时间：
2018
期刊：
影响因子：
--
通讯作者：
Yoshikawa Akira
中科院分区：
文献类型：
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作者：
Murakami Rikito;Kurosawa Shunsuke;Yamane Hisanori;Horiai Takahiko;Shoji Yasuhiro;Yokota Yuui;Yamaji Akihiro;Ohashi Yuji;Kamada Kei;Yoshikawa Akira
用提拉法生长了(La0.25Gd0.75)2Si2O7和(La0.235Ce0.015Gd0.75)2Si2O7单晶。X射线单晶结构分析表明，(La0.25Gd0.75)2Si2O7和(La0.235Ce0.015Gd0.75)2Si2O7分别为单斜晶系(P21/c空间群)，a= 5.3905(8)？，b= 8.5605(11)？，c= 13.957(2)？，β= 0.25Si2O7？，AND= 5.3921(7)？，b= 8.5688(10)？，c= 13.9172(14)？，β= 8.5688(5)？两种不同稀土原子中的一种优先被La和Gd原子或La，Ce和Gd原子占据，另一种只被Gd原子占据。在(La0.25Gd0.75)2Si2O7和(La0.235Ce0.015Gd0.75)2Si2O7单晶的吸收光谱中观察到Gd3+的4f-4f跃迁(8S7/2-6G7/2和8S7/2-6IX)和Ce3+的4f-5d跃迁。
Single crystals of (La0.25Gd0.75)2Si2O7and (La0.235Ce0.015Gd0.75)2Si2O7were grown by the Czochralski method. Structure analysis of the single crystals by X-ray diffraction (XRD) revealed that (La0.25Gd0.75)2Si2O7and (La0.235Ce0.015Gd0.75)2Si2O7crystalize in monoclinic cells (space groupP21/c),a= 5.3905(8) Å,b= 8.5605(11) Å,c= 13.957(2) Å,β= 112.223(6)º, anda= 5.3921(7) Å,b= 8.5688(10) Å,c= 13.9172(14) Å,β= 111.980(5)º, respectively. One of the two different rare-earth sites is preferentially occupied by La and Gd atoms or by La, Ce and Gd atoms, and the other is occupied by Gd atoms only. Peaks attributed to the 4f-4f transitions (8S7/2–6G7/2and8S7/2–6Ix) of Gd3+and 4f-5d transitions of Ce3+were observed in the absorption spectra of (La0.25Gd0.75)2Si2O7and (La0.235Ce0.015Gd0.75)2Si2O7single crystals.