Direct Observation of a Systematic Change of the Magnetic-Domain Structure With Temperature in 50-nm-MnAs/GaAs(001)
Direct Observation of a Systematic Change of the Magnetic-Domain Structure With Temperature in 50-nm-MnAs/GaAs(001)
复制标题
DOI：
10.1109/tmag.2008.2001619
复制
发表时间：
2008-12
影响因子：
2.1
通讯作者：
J.B. Kim;Y.P. Lee;K. Ryu;S. Shin;K.W. Kim;J. Rhee;H. Akinaga
中科院分区：
文献类型：
--
作者：
J.B. Kim;Y.P. Lee;K. Ryu;S. Shin;K.W. Kim;J. Rhee;H. Akinaga
用磁力显微镜(MFM)研究了在17.5°C-45°C温度范围内，在GaAs(001)衬底上外延MNAs膜的磁畴结构的系统变化。随着温度的降低，形成了小的局域化磁畴，并逐渐崩塌为条形磁畴。最后，在MFM实验中直接证实，在17.5℃时，整个薄膜变成了一个几乎单一的磁畴，只包含一小部分非铁磁性的β-MNAs相。
We present the results of a systematic change of magnetic-domain structure of epitaxial MnAs film on GaAs(001) in a temperature range of 17.5degC-45degC by magnetic-force microscopy (MFM). As temperature decreases, the small localized domains are formed and gradually collapse to the stripe domains. Finally, at 17.5degC the whole film turns to be a nearly single magnetic domain including only a small fraction of the nonferromagnetic beta -MnAs phase, as directly confirmed in the MFM experiment.