Millimeter wave radiation-induced magnetoresistance oscillations in the high quality GaAs/AlGaAs 2D electron system under bichromatic excitation
Millimeter wave radiation-induced magnetoresistance oscillations in the high quality GaAs/AlGaAs 2D electron system under bichromatic excitation
复制标题
DOI：
10.1103/physrevb.95.195304
复制
发表时间：
2017-05-03
影响因子：
3.7
通讯作者：
Mani, R. G.
中科院分区：
文献类型：
--
作者：
Gunawardana, B.;Liu, H. -C.;Mani, R. G.
在双色激励下，在 GaAs/AlGaAs 2D 电子系统中检查毫米波辐射引起的磁阻振荡，以研究当毫米波强度针对各种频率组合系统变化时，振荡对角磁阻 R-xx 的演变。结果表明，在低磁场下，较低频率的毫米波激励设置了观察到的 R-xx 响应，因为较高频率的毫米波分量决定了较高磁场下的 R-xx 响应。根据所涉及的转变的顺序对观察结果进行定性解释。结果还使用辐射驱动电子轨道理论进行建模。
Millimeter wave radiation-induced magnetoresistance oscillations are examined in the GaAs/AlGaAs 2D electron system under bichromatic excitation in order to study the evolution of the oscillatory diagonal magnetoresistance, R-xx as the millimeter wave intensity is changed systematically for various frequency combinations. The results indicate that at low magnetic fields, the lower frequency millimeter wave excitation sets the observed R-xx response, as the higher frequency millimeter wave component determines the R-xx response at higher magnetic fields. The observations are qualitatively explained in terms of the order of the involved transitions. The results are also modeled using the radiation-driven electron orbit theory.