Studying the Mechanism of Hybrid Nanoparticle Photoresists: Effect of Particle Size on Photopatterning
Studying the Mechanism of Hybrid Nanoparticle Photoresists: Effect of Particle Size on Photopatterning
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DOI：
10.1021/acs.chemmater.5b01506
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发表时间：
2015-07-28
影响因子：
8.6
通讯作者：
Giannelis, Emmanuel P.
中科院分区：
文献类型：
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作者：
Li, Li;Chakrabarty, Souvik;Giannelis, Emmanuel P.
采用溶胶-凝胶法制备了三种不同有机配体的hf基杂化光刻胶材料，并对其成图机理进行了详细研究。所有的杂化纳米颗粒抗蚀剂都可以通过紫外线曝光来定型。暴露后，它们的粒径从最初的3-4 nm急剧增加到亚微米大小，没有明显的无机含量和热性能变化。XPS结果表明，随着暴露时间的增加，纳米颗粒结构中羧基的质量百分比降低。这些杂化纳米颗粒的颗粒粗化灵敏度与其EUV性能一致。本研究为大规模微电子器件制造中高性能抗蚀材料的发展机理和未来的设计和加工提供了指导。
Hf-based hybrid photoresist materials with three different organic ligands were prepared by a sol gel-based method, and their patterning mechanism was investigated in detail. All hybrid nanoparticle resists are patternable using UV exposure. Their particle sizes show a dramatic increase from the initial 3-4 nm to submicron size after exposure, with no apparent inorganic content or thermal property change detected. XPS results showed that the mass percentage of the carboxylic group in the structure of nanoparticles decreased with increasing exposure duration. The particle coarsening sensitivities of those hybrid nanoparticles are consistent with their EUV performance. The current work provides an understanding for the development mechanism and future guidance for the design and processing of high performance resist materials for large-scale microelectronics device fabrication.