Kinetics of epitaxial growth of Si and SiGe films on (1 1 0) Si substrates
Kinetics of epitaxial growth of Si and SiGe films on (1 1 0) Si substrates
复制标题
(1 1 0) Si 衬底上 Si 和 SiGe 薄膜外延生长动力学
DOI：
10.1016/j.apsusc.2003.08.097
复制
发表时间：
2004
期刊：
影响因子：
--
通讯作者：
S. Takagi
中科院分区：
文献类型：
--
作者：
N. Sugiyama;Y. Moriyama;S. Nakaharai;T. Tezuka;T. Mizuno;S. Takagi
研究了在（110）Si衬底上UHV-CVD对Si和SiGe层的外延生长，并与（100）衬底上的外延生长进行了比较。结果表明，虽然（110）表面的生长速率远低于（100）表面，但（100）和（110）表面SiGe中Ge的含量是相同的，这意味着（100）和（110）底物中Si和Ge源分子的分解产率之比是相同的。这一特性有望导致具有均匀Ge含量的SiGe薄膜在三维图案结构上外延生长，可用于垂直FET和fin -FET。实际上，实验证实了在沟槽结构上生长的SiGe薄膜具有均匀的Ge含量。
The epitaxial growth of Si and SiGe layers on (110) Si substrates using UHV-CVD is studied with comparing that on (100) substrates. It is revealed that, while the growth rate on (110) surfaces is quite lower than that on (100) surfaces, the Ge content of SiGe is the same between (100) and (110) surfaces, meaning that the ratio of decomposition yields of source molecules for Si and Ge are same in both the (100) and (110) substrates. This characteristic is expected to lead to the epitaxial growth of SiGe films with uniform Ge content over the three-dimensional patterned structure, which can be utilized for vertical FET and Fin-FETs. Actually, it has been experimentally confirmed that the SiGe films grown over trench structures has a uniform Ge content.