Large Enhancement of Critical Current in Superconducting Devices by Gate Voltage.
Large Enhancement of Critical Current in Superconducting Devices by Gate Voltage.
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DOI：
10.1021/acs.nanolett.0c03547
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发表时间：
2020-02
期刊：
影响因子：
10.8
通讯作者：
M. Rocci;D. Suri;A. Kamra;Gilvânia Vilela;Y. Takamura;N. Nemes;J. Martínez;M. Hernandez;J. Moodera
中科院分区：
文献类型：
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作者：
M. Rocci;D. Suri;A. Kamra;Gilvânia Vilela;Y. Takamura;N. Nemes;J. Martínez;M. Hernandez;J. Moodera
通过外加电场对高载流子密度超导体的性质进行有效控制被认为是不可行的，这是由于电场在原子长度尺度上的屏蔽。在这里，我们展示了在背栅可调NbN微和纳米超导桥的临界电流的增强高达30%。我们建议的合理机制，这种增强的临界电流的基础上表面成核和钉扎的Abrikosov涡是一致的预期和观察II型超导体薄膜的厚度与其相干长度。此外，我们证明了一个依赖于外加电场的无限电阻和滞后电阻。我们的工作提出了一个电场驱动的增强在II型超导体的超导性能，这是一个关键的一步，对理解场效应的基本性质的超导体和开发逻辑和存储器的应用程序中的超导体为基础的低功耗数字计算范例。
Significant control over the properties of a high-carrier density superconductor via an applied electric field has been considered infeasible due to screening of the field over atomic length scales. Here, we demonstrate an enhancement of up to 30% in critical current in a back-gate tunable NbN micro- and nano superconducting bridges. Our suggested plausible mechanism of this enhancement in critical current based on surface nucleation and pinning of Abrikosov vortices is consistent with expectations and observations for type-II superconductor films with thicknesses comparable to their coherence length. Furthermore, we demonstrate an applied electric field-dependent infinite electroresistance and hysteretic resistance. Our work presents an electric field driven enhancement in the superconducting property in type-II superconductors which is a crucial step toward the understanding of field-effects on the fundamental properties of a superconductor and its exploitation for logic and memory applications in a superconductor-based low-dissipation digital computing paradigm.