Strong suppression of graphene growth by sulfur superstructure on a nickel substrate
Strong suppression of graphene growth by sulfur superstructure on a nickel substrate
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DOI：
10.1103/physrevmaterials.6.034007
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发表时间：
2022-03
影响因子：
3.4
通讯作者：
K. Sagisaka;J. Nara;J. Wenderott;Ryo Kadowaki;Akane Maruta;T. Abukawa;D. Fujita
中科院分区：
文献类型：
--
作者：
K. Sagisaka;J. Nara;J. Wenderott;Ryo Kadowaki;Akane Maruta;T. Abukawa;D. Fujita
在镍衬底上形成多层石墨烯通常是不可避免的，这是由于单层石墨烯生长后冷却时碳的析出。我们发现，当Ni(110)表面被以c为周期排列的硫原子覆盖时，石墨烯在该表面上的生长速率明显降低。扫描隧道显微镜的原子学研究表明，由于石墨烯覆盖区域的生长，硫的超结构受到了压缩。光电子发射显微镜显示，石墨烯的生长速率与时间呈线性关系，这表明碳原子只在石墨烯岛的生长前沿提供。密度泛函理论计算合理地解释了这些实验结果，并提出了一种抑制石墨烯生长的机理。硫原子可能会扩大镍衬底的用途，用于生产单层石墨烯或纳米石墨烯。
The formation of multilayer graphene on a nickel substrate is usually unavoidable due to the precipitation of carbon upon cooling after the growth of the single layer of graphene. We found that the growth rate of graphene on a Ni(110) surface was markedly reduced when the surface was covered by sulfur atoms arranged in a c() periodicity. An atomistic survey by scanning tunneling microscopy revealed a compression of the sulfur superstructure as a result of the growth of graphene-covered regions. Photoelectron emission microscopy showed that the growth rate of graphene is linear with time, which indicates that carbon atoms are supplied only at the growth front of graphene islands. Density functional theory calculations rationalized these experimental results and suggested a mechanism for suppressing the growth of graphene. Sulfur atoms might extend the utility of nickel substrates for the production of single-layer graphene or nanographenes.