Enhanced flux pinning in YGdBCO film grown by sol–gel approach
Enhanced flux pinning in YGdBCO film grown by sol–gel approach
复制标题
DOI：
10.1007/s10971-014-3275-y
复制
发表时间：
2014-01
影响因子：
2.5
通讯作者：
C. Li;L. Jin;Z. Yu;S. N. Zhang;Y. F. Lu;J. Feng;Y. Wang;P. Zhang
中科院分区：
文献类型：
--
作者：
C. Li;L. Jin;Z. Yu;S. N. Zhang;Y. F. Lu;J. Feng;Y. Wang;P. Zhang
采用苯甲酸修饰的三氟乙酸酯前驱体溶液，采用溶胶-凝胶法在LaAlO3（00l）衬底上制备了gd掺杂YBCO薄膜。研究了Gd掺杂对YBCO薄膜织构、微观结构和磁通钉接性能的影响。通过优化gd掺杂，ygdxba2cu3oyf薄膜的表面和结构得到了改善。离子缺陷的引入可以提高YGdBCO薄膜的临界电流密度（Jc）和磁钉力（Fp）。ygd0.1 ba2cu3y薄膜在磁场中的jcandfp值几乎是纯YBCO薄膜的2倍。这些结果表明，溶胶-凝胶法制备gd掺杂YBCO相是提高YBCO膜载流性能的一种有前景的方法。
Gd-doping YBCO films were fabricated on LaAlO3(00l) substrates by sol–gel method using benzoic acid modified trifluoroacetates precursor solution. Effects of Gd doping on texture, microstructure and flux pinning properties of YBCO films were investigated. With optimal Gd-doping, the surface and texture of YGdxBa2Cu3Oyfilms have been improved. The introduction of ion defects can improve the critical current density (Jc) and flux pinning force (Fp) of the YGdBCO films. TheJcandFpvalues of YGd0.1Ba2Cu3Oyfilm are almost two times higher than that of pure YBCO film in magnetic field. These results indicate that Gd-doping YBCO phase with sol–gel process is a perspective method for enhancement of current carrying capability of YBCO film.