Heteroepitaxial Integration of Mid-Infrared InAsSb Light Emitting Diodes on Silicon
Heteroepitaxial Integration of Mid-Infrared InAsSb Light Emitting Diodes on Silicon
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DOI：
10.1109/jphot.2019.2911433
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发表时间：
2019-04
影响因子：
2.4
通讯作者：
E. Delli;P. Hodgson;E. Repiso;A. Craig;Jonathan P. Hayton;Q. Lu;A. Marshall;A. Krier;P. Carrington
中科院分区：
文献类型：
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作者：
E. Delli;P. Hodgson;E. Repiso;A. Craig;Jonathan P. Hayton;Q. Lu;A. Marshall;A. Krier;P. Carrington
硅光子学已成为下一代紧凑型光电系统最有前途的技术，但仍需要进一步开发以实现高效可靠的片上光源。锑化物基化合物半导体材料在硅上的直接外延生长提供了一条通往新的中红外固态光源和硅平台上的综合光子电路的单片集成的途径。这种设备在环境监测和医疗诊断中具有广泛的应用。报道了利用分子束外延技术在硅衬底上直接集成中红外InAsSb发光二极管的实现。采用一种新型的无反相畴的GaSb硅基缓冲层实现了InAsSb p-i-n器件在硅上的异质外延集成。该器件在室温下表现出高效的光发射，峰值在4.5 μm左右，这与CO2大气吸收带很好地对应。在300 K下测得输出功率为6 μW，外量子效率为0.011%。这些结果表明，中红外III-V发光二极管可以直接在硅上生长，这是实现下一代片上集成光源的重要一步。
Silicon photonics has emerged as the most promising technology for next-generation compact optoelectronic systems, but further development is still required to achieve efficient and reliable on-chip light sources. Direct epitaxial growth of antimonide-based compound semiconductor materials on silicon provides a pathway toward the monolithic integration of new, mid-infrared solid-state light sources and comprehensive photonic circuits on silicon platforms. Such devices have wide-ranging applications in environmental monitoring and medical diagnostics. This paper reports on the realization of a mid-infrared InAsSb light emitting diode directly integrated onto silicon using molecular beam epitaxy. The heteroepitaxial integration of the InAsSb p-i-n device onto silicon was achieved with the use of a novel, antiphase domain-free, GaSb-on-silicon buffer layer. The device exhibited efficient light emission at room temperature, peaking at around 4.5 μm, which corresponds well to the CO2 atmospheric absorption band. An output power of 6 μW and an external quantum efficiency of 0.011% was measured at 300 K. These results demonstrate mid-infrared III-V light emitting diodes can be directly grown on silicon, which is an essential step towards the realization of the next generation, on-chip integrated light sources.