Low temperature deposition of patterned TiO2 thin films using photopatterned self-assembled monolayers
Low temperature deposition of patterned TiO2 thin films using photopatterned self-assembled monolayers
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DOI：
10.1063/1.117916
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发表时间：
1996-08-05
影响因子：
4
通讯作者：
Sukenik, CN
中科院分区：
文献类型：
--
作者：
Collins, RJ;Shin, H;Sukenik, CN
在Si衬底上的自组装单层膜（SAM）上，利用水溶液沉积了图案化的TiO 2薄膜。含有磺酸盐表面官能团的SAM区域通过最初沉积的硫代乙酸酯基团通过掩模的光氧化来产生。选择性地沉积纳米TiO 2-on-SAM膜在SAM的光解区域上。这种薄膜的电性能进行了评估，为潜在的微电子器件的应用。在未图案化的TiO 2薄膜上进行的电流-电压和电容-电压测量得到的相对介电常数值范围为24至57，薄膜介电常数为1.0-1.5x10（9）Ω cm，击穿电压超过1 MV/cm。(C)1996年美国物理学会。
Patterned thin films of TiO2 were deposited from aqueous solution onto photopatterned self-assembled monolayer (SAM) films on Si substrates. Regions of the SAM containing sulfonate surface functionality were created by the photo-oxidation of initially deposited thioacetate groups through a mask. The nanocrystalline TiO2-on-SAM films were deposited selectively on the photolyzed regions of the SAM. The electrical properties of such films were assessed for potential microelectronic device applications. Current-voltage and capacitance-voltage measurements made on nonpatterned TiO2 films yielded values of relative permittivity ranging from 24 to 57, film resistivities of 1.0-1.5x10(9) Omega cm and breakdown voltages in excess of 1 MV/cm. (C) 1996 American Institute of Physics.