Doping and fabrication of polar-plane-free faceted InGaN LEDs with polychromatic emission properties on (1122) semipolar planes
Doping and fabrication of polar-plane-free faceted InGaN LEDs with polychromatic emission properties on (1122) semipolar planes
复制标题
DOI：
10.1063/5.0029292
复制
发表时间：
2020-12-07
影响因子：
3.2
通讯作者：
Kawakami, Yoichi
中科院分区：
文献类型：
--
作者：
Matsuda, Yoshinobu;Funato, Mitsuru;Kawakami, Yoichi
Electrically driven polar-plane-free faceted InGaN light-emitting diodes (LEDs) are demonstrated on semipolar (1 1 22 ) GaN substrates. The doping properties on the (1 1 2 2 ) plane are investigated using planar LED structures. After establishing the doping conditions, three-dimensional faceted LED structures composed of semipolar and nonpolar planes are fabricated by regrowth on the ( 1 1 2 2 ) GaN substrates with dielectric masks. The fabricated LEDs exhibit a clear rectifying property and a polychromatic emission derived from facet-dependent emission colors, which can be tuned by altering the mask geometry. These observations suggest that polar-plane-free LED structures may lead to highly radiative polychromatic light emitters.
