Optical and structural studies of dual wavelength InGaN/GaN tunnel-injection light emitting diodes grown by metalorganic chemical vapor deposition
Optical and structural studies of dual wavelength InGaN/GaN tunnel-injection light emitting diodes grown by metalorganic chemical vapor deposition
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金属有机化学气相沉积双波长InGaN/GaN隧道注入发光二极管的光学和结构研究
DOI：
10.1016/j.tsf.2012.05.038
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发表时间：
2013-02-01
期刊：
影响因子：
2.1
通讯作者：
Yang, Jer-Ren
中科院分区：
文献类型：
--
作者：
Feng, Zhe Chuan;Zhu, Li-Hong;Yang, Jer-Ren
采用金属有机化学气相沉积（MOCVD）方法在蓝宝石衬底上生长了具有电荷非对称共振隧穿结构的InGaN/GaN多量子阱发光二极管，该发光二极管可发出蓝/绿色或蓝/黄色双色光。通过高分辨X射线衍射、高分辨透射电子显微镜、变温光致发光（PL）和光致发光激发（PLE）研究了它们的光学和结构性质。发现PL峰位移和PLE特征随阱生长温度而变化。从In组分涨落、载流子局域化和量子限制Stark效应等方面详细讨论了其发光机理。(C)2012爱思唯尔有限公司版权所有。
InGaN/GaN multiple quantum well light emitting diodes with charge asymmetric resonance tunneling structure, which can emit dual color lights of blue/green or blue/yellow, were grown on sapphire by metalorganic chemical vapor deposition. Their optical and structural properties are studied by high-resolution X-ray diffraction, high-resolution transmission electron microscopy, temperature-dependent photoluminescence (PL) and photoluminescence excitation (PLE). PL peak shifts and PLE features are found to vary with the well-growth temperature. The luminescence mechanism is discussed in details, correlating to the In composition fluctuation, carrier localization and the quantum confined Stark effect. (C) 2012 Elsevier B.V. All rights reserved.