Investigation of subgrains in directionally solidified cast mono-seeded silicon and their interactions with twin boundaries
Investigation of subgrains in directionally solidified cast mono-seeded silicon and their interactions with twin boundaries
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DOI：
10.1016/j.solmat.2020.110817
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发表时间：
2020-12
影响因子：
6.9
通讯作者：
M. Becker;E. Pihan;F. Guittonneau;L. Barrallier;G. Regula;H. Ouaddah;G. Reinhart;N. Mangelinck-Noël
中科院分区：
文献类型：
--
作者：
M. Becker;E. Pihan;F. Guittonneau;L. Barrallier;G. Regula;H. Ouaddah;G. Reinhart;N. Mangelinck-Noël
对铸造单晶硅籽晶和浮区硅籽晶进行了定向凝固，分析了籽晶和再生长部分的晶粒和缺陷结构，并利用X射线衍射成像技术对位错排列进行了原位观察。在加热过程中，在FZ籽晶中，移动的位错在{111}面上滑动，而在铸造的单籽晶中，位错主要排列在非移动的胞状结构中。以围绕[001]生长轴的取向差为特征的亚晶界大致沿着生长轴传播，并通过与在其附近出现的新亚晶界合并来增加其取向差。虽然第一次开始的亚晶形成不能透露，在两个种子的位错排列的比较强烈建议后者对亚晶形成的影响。在再生长部分，亚晶界和孪晶界之间的相互作用表明，它们可以沿着α 3{111}和α 9{221}晶界或穿过α 3{111}晶界。113 {111} GB是否交叉取决于孪晶两侧晶粒的取向。结果表明，晶粒的取向关系，而不仅仅是晶界特征，对多晶硅铸锭中亚晶结构的演变和再分布起着重要的作用。
Directional solidification of a cast mono silicon seed and of a float-zone (FZ) silicon seed was performed and the grain and defect structures of the seeds as well as of the regrown parts are analyzed.In situX-ray diffraction imaging enabled the observation of the dislocation arrangements. During the heating process, in the FZ seed, mobile dislocations glide on {111} planes, whereas in the cast mono seed dislocations are arranged in a mainly immobile cellular structure.Ex situgrain orientation mappings reveal the presence of subgrains with misorientations up to 3° in the regrown part of the cast mono-seeded sample, which are not observed in the regrown part of the FZ-seeded sample. Subgrain boundaries characterized by misorientations around the [001] growth axis propagate roughly along the growth axis and increase their misorientation by merging with new subgrain boundaries appearing in their vicinity. Although the first inception of subgrain formation cannot be revealed, the comparison of the dislocation arrangements in the two seeds strongly suggests an influence of the latter on subgrain formation. In the regrown part, interactions between subgrain boundaries and twin boundaries show that they can follow Σ3{111} and Σ9{221} grain boundaries or cross Σ3{111} grain boundaries. Whether Σ3{111} GBs are crossed or not depends among other things on the orientation of the grains on either side of the twin. It demonstrates that the grain orientation relationship and not only the grain boundary character play an important role in the subgrain structure evolution and redistribution in a multicrystalline silicon ingot.