Triple-push oscillator approach: theory and experiments
Triple-push oscillator approach: theory and experiments
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DOI：
10.1109/4.953475
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发表时间：
2001-10
期刊：
影响因子：
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通讯作者：
Yunxin Tang;Huei Wang
中科院分区：
文献类型：
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作者：
Yunxin Tang;Huei Wang
本文介绍了三推振荡器方法的理论和实验。该振荡器架构与三个相同的振荡器子电路相结合。分析模式分析用于描述所有模式的行为。如将示出的，每个振荡器子电路中的奇模电流彼此具有120/spl度/相移，并且因此产生三次谐波的同相组合。对一个三推振荡器进行了时域分析，结果表明，在各个振荡器支路之间存在120/spl deg/相移的现象。为了证明这一概念，4.9 GHz的混合双极结型晶体管（BJT）电路和28.4 GHz的异质结双极型晶体管（BJT）MMIC芯片进行了演示。测试结果表明，4.9 GHz BJT三推振荡器在4.9 GHz时输出功率为1.0 dBm，基波抑制为12.0 dB; 28.4 GHz HBT MMIC芯片的中心频率为28.4 GHz，输出功率为-15.4 dBm，而基波和二次谐波信号的输出功率被抑制到-21和-34 dBm。
This paper presents the theory and experiments of the triple-push oscillator approach. This oscillator architecture is combined with three identical oscillator subcircuits. An analytical mode analysis is used to describe the behavior of all modes. As will be shown, odd-mode currents in each oscillator subcircuit have a 120/spl deg/ phase shift to one another and thus produce in-phase combining for the third harmonic. The time domain analysis was performed to simulate a triple-push oscillator, showing that the phenomenon of 120/spl deg/ phase shift exists among each oscillator subcircuit. To prove this concept, a 4.9-GHz hybrid bipolar junction transistor (BJT) circuit and a 28.4-GHz heterojunction bipolar transistor (BJT) MMIC chip were demonstrated. The measured results showed that the 4.9-GHz BJT triple-push oscillator delivered an output power of 1.0 dBm at 4.9 GHz with 12.0-dB fundamental rejection, and the 28.4-GHz HBT MMIC chip exhibited a measured center frequency at 28.4 GHz with an output power of -15.4 dBm, while the output powers of the fundamental and the second harmonic signals were suppressed to -21 and -34 dBm.