An improved linear modeling technique with sensitivity analysis for GaN HEMT
An improved linear modeling technique with sensitivity analysis for GaN HEMT
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DOI：
10.1002/jnm.2139
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发表时间：
2017
期刊：
影响因子：
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通讯作者：
Danting Luo;Li Shen;Jianjun Gao
中科院分区：
文献类型：
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作者：
Danting Luo;Li Shen;Jianjun Gao
本文提出了一种改进的氮化镓高电子迁移率晶体管小信号等效电路在不同偏置条件下的线性建模技术。该方法是将测试结构和灵敏度分析方法相结合，以提高小信号模型中固有元素的精度。本文还给出了相对灵敏度随实测散射参数偏差的解析表达式。推导出的关系具有普遍的有效性，但在高达40 GHz的频率范围内，测量的S -参数与模拟的S -参数之间的良好一致性已得到验证。版权所有©2016 John Wiley & Sons， Ltd。
An improved linear modeling technique for gallium nitride high electron mobility transistor small‐signal equivalent circuit under different bias conditions is presented in this paper. The method is a combination of the test structure and sensitivity analytical method to improve the precision of the intrinsic elements in the small‐signal model. The analytical expressions for the relative sensitivities with respect to deviations in the measured scattering (S) parameters are also given here. The derived relationships have universal validity, but they have been verified by the good agreement between the measured S‐parameters and simulated ones over the frequency range up to 40 GHz. Copyright © 2016 John Wiley & Sons, Ltd.