Electron scattering due to threading edge dislocations in n-type wurtzite GaN
Electron scattering due to threading edge dislocations in n-type wurtzite GaN
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DOI：
10.1063/1.2168028
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发表时间：
2006-02
影响因子：
3.2
通讯作者：
J. H. You;Junqiang Lu;H. Johnson
中科院分区：
文献类型：
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作者：
J. H. You;Junqiang Lu;H. Johnson
从理论上研究了电活性VGa-ON穿透刃位错对n型外延纤锌矿GaN漂移和霍尔迁移率的影响。首先通过密度泛函理论原子计算得到了位错核上沿着的电荷分布，发现位错核上缺失的Ga原子附近的两个N原子是电子受体.然后，对于每个结构单元的穿透位错核的电荷高达− 2 q的情况，推导出位错静电强度的精确解析表达式。该强度因子通过使部分带电位错线的每个位点的自由能的总增加最小化来确定。两种不同的模型的散射电位带电位错线，然后用于确定位错效应的面内电子迁移率，和封闭形式的解决方案的位错贡献漂移和霍尔迁移率推导出更准确的电位。通过估算…
The effect of electrically active VGa–ON threading edge dislocations on drift and Hall mobilities in n-type epitaxial wurtzite (WZ) GaN is investigated theoretically. The charge distribution along the dislocation core is first obtained by means of a density-functional theory atomistic calculation; the two N atoms near the missing Ga atom at the dislocation core are found to be electron acceptors. An accurate analytical expression for dislocation electrostatic strength is then derived for the case of up to −2q charge per structural unit of the threading dislocation core. This strength factor is determined by minimizing the total increase of free energy per site of the partially charged dislocation line. Two different models of scattering potentials for charged dislocation lines are then used to determine the dislocation effect on in-plane electron mobility, and closed-form solutions for the dislocation contribution to drift and Hall mobilities are derived for the more accurate potential. By estimating the ...