Tunable anomalous hall effect induced by interfacial catalyst in perpendicular multilayers
Tunable anomalous hall effect induced by interfacial catalyst in perpendicular multilayers
复制标题
垂直多层界面催化剂引起的可调反常霍尔效应
DOI：
10.1016/j.apsusc.2017.11.114
复制
发表时间：
2018
影响因子：
6.7
通讯作者：
S. G. Wang
中科院分区：
文献类型：
--
作者：
J. Y. Zhang;W. L. Peng;Q. Y. Sun;Y. W. Liu;B. W. Dong;X. Q. Zheng;G. H. Yu;C. Wang;Y. C. Zhao;S. G. Wang
界面结构对薄膜和多层膜中的输运性质和垂直磁各向异性起着关键作用，可以通过在各种界面处插入双功能层来改变。采用界面催化技术对Ta/CoFeB/X/MgO/Ta（X：Hf或Pt）多层膜的反常霍尔效应（AHE）进行了调谐。与未插入Hf的参考样品相比，插入0.1nm Hf的饱和反常霍尔电阻（RAH）增加了16.5%。然而，当插入0.1nm的Pt时，RAH值降低了9.0%。用X射线光电子能谱（XPS）对界面态进行了表征。XPS结果表明，Hf插入时，Hf与O之间存在强键合，而Pt插入时，Pt与O之间不存在键合。金属与氧之间的键合导致了界面处氧的各种迁移行为。因此，RAH的相反行为源于不同的界面插入导致的不同的氧行为。这为自旋输运性质的调控提供了一种新的途径。
The interfacial structures, playing a critical role on the transport properties and the perpendicular magnetic anisotropy in thin films and multilayers, can be modified by inserting an ultrathin functional layer at the various interfaces. The anomalous Hall effect (AHE) in the multilayers with core structure of Ta/CoFeB/X/MgO/Ta (X: Hf or Pt) is tuned by interfacial catalytic engineering. The saturation anomalous Hall resistance (RAH) is increased by 16.5% with 0.1 nm Hf insertion compared with the reference sample without insertion. However, the RAHvalue is decreased by 9.0% with 0.1 nm Pt insertion. The interfacial states were characterized by the X-ray photoelectron spectroscopy (XPS). The XPS results indicate that a strong bonding between Hf and O for Hf insertion, but no bonding between Pt and O for Pt insertion. The bonding between metal and oxygen leads to various oxygen migration behavior at the interfaces. Therefore, the opposite behavior about the RAHoriginates from the different oxygen behavior due to various interfacial insertion. This work provides a new approach to manipulate spin transport property for the potential applications.