Electronic band structure of La4Sb3 and La4Bi3
Electronic band structure of La4Sb3 and La4Bi3
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La4Sb3 和 La4Bi3 的电子能带结构
DOI：
10.1016/0304-8853(85)90287-2
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发表时间：
1985
影响因子：
2.7
通讯作者：
T. Kasuya
中科院分区：
文献类型：
--
作者：
K. Takegahara;H. Harima;T. Kasuya
对La4Sb3和La4Bi3进行了自洽APW能带计算。在主要来源于Lad态的导带和主要来源于p态和Lad态的价带之间出现了一个很窄的间隙。在Sm4Bi3中，4f能级应该在这个带隙中，但接近导带的底部。
The self-consistent APW band calculations for La4Sb3and La4Bi3have been done. A narrow gap appears between the conduction bands derived dominantly from the La d states and the valence bands derived mostly from the p states of pnictogens mixed with the La d states. In Sm4Bi3the 4f level is expected to be in this gap, but closes to the bottom of conduction band.