The influence of Fermi level pinning/depinning on the Schottky barrier height and contact resistance in Ge/CoFeB and Ge/MgO/CoFeB structures
The influence of Fermi level pinning/depinning on the Schottky barrier height and contact resistance in Ge/CoFeB and Ge/MgO/CoFeB structures
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DOI：
10.1063/1.3285163
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发表时间：
2010-02
影响因子：
4
通讯作者：
D. Lee;S. Raghunathan;Robert J. Wilson;D. Nikonov;K. Saraswat;Shan X. Wang
中科院分区：
文献类型：
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作者：
D. Lee;S. Raghunathan;Robert J. Wilson;D. Nikonov;K. Saraswat;Shan X. Wang
我们证明了在CoFeB和Ge之间的MgO层调制了自旋二极管的肖特基势垒高度和接触电阻。我们证实，令人惊讶的是，绝缘MgO层显着降低肖特基势垒高度和N+Ge上的自旋二极管的接触电阻，相反的P+Ge观察到的增加。N+Ge上0.5 nm厚的MgO层将肖特基势垒高度从0.47 eV降低到0.05 eV，并将最小接触电阻降低100倍至1.5×10−6 Ω m2。这些结果为从铁磁材料和半导体中高效注入自旋开辟了一条途径。
We demonstrated that an ultrathin MgO layer between CoFeB and Ge modulated the Schottky barrier heights and contact resistances of spin diodes. We confirmed that, surprisingly, an insulating MgO layer significantly decreased the Schottky barrier heights and contact resistances of spin diodes on N+Ge, opposite to the increase observed for P+Ge. A 0.5 nm thick MgO layer on N+Ge decreases the Schottky barrier height from 0.47 to 0.05 eV and lowers the minimum contact resistance 100-fold to 1.5×10−6 Ω m2. These results open a pathway for high efficient spin injection from ferromagnetic materials and semiconductors.