Thermoelectric performance of p-type zone-melted Se-doped Bi0.5Sb1.5Te3 alloys
Thermoelectric performance of p-type zone-melted Se-doped Bi0.5Sb1.5Te3 alloys
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p型区熔Se掺杂Bi0.5Sb1.5Te3合金的热电性能
DOI：
10.1007/s12598-018-1005-2
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发表时间：
2018-04-01
期刊：
影响因子：
8.8
通讯作者：
Zhao, Xin-Bing
中科院分区：
文献类型：
--
作者：
Zhai, Ren-Shuang;Wu, Ye-Hao;Zhao, Xin-Bing
对于区熔（ZM）碲化铋基合金来说，这种合金广泛用于固态冷却和室温左右的低温发电，引入点缺陷是提高其热电性能的主要方法。在此，我们报道了 Se 掺杂对 p 型 Bi0.5Sb1.5Te3-xSex + 3 wt% Te ZM 锭热电性能的多重影响，这增加了载流子浓度，降低了晶格热导率并恶化了载流子迁移率。结果，由于热导率降低和本征传导受到抑制，峰值品质因数 (ZT) 转移到更高的温度，并在 350 K 时获得约 1.2 的高 ZT。此外，通过降低 Sb 含量来优化室温性能，并在 300 K 下获得 ZT ~ 1.1。这些结果对于设计和优化商用 Bi0.5Sb1.5Te3+ 3 wt% Te ZM 合金的热电性能具有重要意义。
For zone-melted (ZM) bismuth telluride-based alloys, which are widely commercially available for solid-state cooling and low-temperature power generation around room temperature, introducing point defects is the chief approach to improve their thermoelectric performance. Herein, we report the multiple effects of Se doping on thermoelectric performance of p-type Bi0.5Sb1.5Te3-xSex + 3 wt% Te ZM ingots, which increases carrier concentration, reduces lattice thermal conductivity and deteriorates the carrier mobility. As a result, the peak figure of merit (ZT) is shifted to a higher temperature and a high ZT ~ 1.2 at 350 K is obtained, due to the reduced thermal conductivity and suppressed intrinsic conduction. Further, decreasing Sb content is followed to optimize the room temperature performance and a ZT ~ 1.1 at 300 K is obtained. These results are significant for designing and optimizing the thermoelectric performance of commercial Bi0.5Sb1.5Te3+ 3 wt% Te ZM alloys.