Ferroelectric and dielectric properties of Bi4-xNdxTi3O12 thin films prepared by sol–gel method
Ferroelectric and dielectric properties of Bi4-xNdxTi3O12 thin films prepared by sol–gel method
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DOI：
10.1007/s10854-011-0495-6
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发表时间：
2012-03
期刊：
影响因子：
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通讯作者：
Changyong Liu;Dongyun Guo;Chuanbin Wang;Q. Shen;Lianmeng Zhang
中科院分区：
文献类型：
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作者：
Changyong Liu;Dongyun Guo;Chuanbin Wang;Q. Shen;Lianmeng Zhang
采用溶胶-凝胶法在 Pt/Ti/SiO2/Si 衬底上制备 Bi4-xNdxTi3O12(BNT-x, x = 0、0.25、0.50、0.75 和 1.0) 薄膜。研究了BNT-x薄膜的微观结构、铁电和介电性能。获得单相BNT-x薄膜。随着Nd含量的增加，择优取向从随机变为(117)，表面形貌从棒状和板状晶粒的混合变化为棒状晶粒。 Nd 替代改善了 BTO 薄膜的铁电和介电性能。 BNT-x 薄膜在 x = 0.50—1.0 时表现出更好的电性能。 BNT-0.75薄膜表现出最佳的电性能，剩余极化(2Pr)为26.6μC/cm2，介电常数(εr)为366(在1MHz)，介电损耗(tanδ)为0.034(在1MHz)，漏电流密度(J)为±3.0×10−6A/cm2(在±5V)和无疲劳特性。
Bi4-xNdxTi3O12(BNT-x, x = 0, 0.25, 0.50, 0.75 and 1.0) thin films were prepared on Pt/Ti/SiO2/Si substrates by a sol–gel method. The microstructure, ferroelectric and dielectric properties of BNT-x thin films were investigated. The single-phase BNT-x thin films were obtained. With increasing Nd content, the preferred orientation changed from random to (117) and surface morphologies changed from the mixture of rod- and plate-like grains to rod-like grains. The Nd substitution improved the ferroelectric and dielectric properties of BTO films. BNT-x films showed better electrical properties at x = 0.50—1.0. BNT-0.75 film exhibited the best electrical properties with remanent polarization (2Pr) of 26.6 μC/cm2, dielectric constant (εr) of 366 (at 1 MHz), dielectric loss (tanδ) of 0.034 (at 1 MHz), leakage current density (J) of ±3.0 × 10−6A/cm2(at ± 5 V) and fatigue-free characteristics.