Josephson junctions based on amorphous MoGe: prospects for use in superconducting electronics
Josephson junctions based on amorphous MoGe: prospects for use in superconducting electronics
复制标题
基于非晶MoGe的约瑟夫森结：在超导电子学中的应用前景
DOI：
10.1088/1361-6668/ac4b00
复制
发表时间：
2022
影响因子：
3.6
通讯作者：
J. Ketterson
中科院分区：
文献类型：
--
作者：
I. Nevirkovets;M. Belogolovskii;J. Ketterson
我们已经制备并表征了具有非常薄的Al/AlOx/(Al)势垒的全MOGE约瑟夫森结，其中非晶态MOGe薄膜的超导转变温度高达7K。由于MOGe薄膜表面形貌的一致性，这些结的隧道特性表现出高度的均匀性。亚隙电流随温度变化的实验数据与理论计算符合得很好。这些结果表明，基于非晶态超导体的约瑟夫森隧道结在超导电子学中有很好的应用前景，特别是在需要多个堆积结或产生非平衡准粒子分布的应用中。
We have fabricated and characterized all-MoGe Josephson junctions with a very thin Al/AlO x /(Al) barrier, where the amorphous MoGe films exhibit superconducting transition temperatures up to 7 K. Due to the uniformity of the surface morphology of the MoGe films, the junctions demonstrate high uniformity of their tunneling properties. The experimental data on the temperature dependence of the subgap current agree well with theoretical calculations. The results obtained imply that Josephson tunnel junctions based on amorphous superconductors are promising candidates for use in superconducting electronics, especially in applications requiring multiple stacked junctions or the creation of a nonequilibrium quasiparticle distribution.