Numerical Simulation of Tunnel Effect Transistors Employing Internal Field Emission of Schottky Barrier Junction
Numerical Simulation of Tunnel Effect Transistors Employing Internal Field Emission of Schottky Barrier Junction
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采用肖特基势垒结内场发射的隧道效应晶体管的数值模拟
DOI：
10.7567/ssdm.1993.c-1-2
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发表时间：
1993
期刊：
影响因子：
--
通讯作者：
J. Shirafuji
中科院分区：
文献类型：
--
作者：
R. Hattori;J. Shirafuji
利用肖特基势垒结（SBTT）的内场致发射技术的隧道晶体管有望成为高密度、低成本集成电路的重要元件。为了表征SBTT的性能，我们对四种典型的器件结构进行了二维数值模拟。SBTT的输出特性基本上是triodelike的，也就是说，漏极电流随着栅极电压的增加而呈指数增加，具有高的非线性传输性能，如仿真所阐明的。当沟道层比漏极附近的栅极偏置形成的耗尽层宽度厚时，观察到这种三重态特性。在薄沟道层的情况下，由于夹断效应，漏极电流随着栅极偏压的增加而出现饱和特征，这有利于减小关断状态下的漏电流。制作了晶体硅的n沟道SBTT原型，并证实了其晶体管作用。
Tunnel transistors employing internal field emission of the Schottky barrier junction (SBTT) are expected to be a promising component for high-density and low-cost integrated circuits. In order to characterize the performance of SBTT, we carried out 2-D numerical simulation on four typical device structures. The output characteristics of SBTT are basically triodelike; that is, the drain current increases exponentially with increasing gate voltage, having high and nonlinear transfer performance, as elucidated by the simulation. This triodelike characteristic is observed when the channel layer is thicker than the depletion layer width formed by gate bias near the drain. In the case of a thin channel layer, a saturation feature of the drain current with increasing gate bias appears due to a pinch-off effect, which is favorable for reducing the leakage current in the off state. A prototype n-channel SBTT of crystalline silicon was fabricated and its transistor action was confirmed.