Perfectly conducting channel on the dark surface of weak topological insulators
Perfectly conducting channel on the dark surface of weak topological insulators
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弱拓扑绝缘体暗表面的完美导电沟道
DOI：
10.1103/physrevb.88.045408
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发表时间：
2013
期刊：
影响因子：
--
通讯作者：
and K.-I. Imura
中科院分区：
文献类型：
--
作者：
Y. Yoshimura;A. Matsumoto;Y. Takane;and K.-I. Imura
弱拓扑绝缘体(WTI)表面一般带有偶数个狄拉克锥体，容易发生倍增，而在某一取向的表面上则不显示狄拉克锥体。在WTI的这个“暗”表面上，我们预测会出现一对孤立的一维理想导电通道，并形成一个闭合的环路或一段线。前者通常与暗表面上形成的单原子层厚的岛有关，而后者被证明是一对晶体(螺型)位错终止于暗表面的结果。
A weak topological insulator (WTI) bears, generally, an even number of Dirac cones on its surface; they are susceptible to doubling, while on the surface of a certain orientation it shows no Dirac cone. On this “dark” surface of a WTI, we predict that a single pair of isolated one-dimensional perfectly conducting channels emerges and forms either a closed loop or a segment of a line. The former is associated typically with a single-atomic-layer-thick island formed on the dark surface, while the latter is shown to be the consequence of a pair of crystal (screw) dislocations terminating on the dark surface.