CVD assisted fabrication of graphene layers for field effect device fabrication
CVD assisted fabrication of graphene layers for field effect device fabrication
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用于场效应器件制造的 CVD 辅助石墨烯层制造
DOI：
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发表时间：
2011
期刊：
影响因子：
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通讯作者：
U. Schwalke
中科院分区：
文献类型：
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作者：
Pia Juliane Ginsel;Frank Wessely;Emrah Birinci;U. Schwalke
在本文中，我们报告的石墨烯场效应器件的石墨烯层的制造和表征。在使用甲烷原料通过化学气相沉积制造石墨烯层之后，设计带隙以限制石墨烯的横向尺寸，以便获得石墨烯纳米带。将石墨烯纳米带与适当的金属材料接触将产生适合于各种应用的场效应器件。
In this paper, we report on the fabrication and characterization of graphene layers for graphene field effect devices. After the graphene layers are fabricated by means of chemical vapor deposition using a methane feedstock, the band gap is engineered confining the lateral dimensions of graphene in order to obtain graphene nanoribbons. Contacting the graphene nanoribbons with appropriate metallic materials will lead to field effect devices suitable for various applications.