Emissive Probe Study of CF4/H2 Etching Plasma
Emissive Probe Study of CF4/H2 Etching Plasma
复制标题
CF4/H2蚀刻等离子体的发射探针研究
DOI：
10.1143/jjap.30.578
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发表时间：
1991
影响因子：
1.5
通讯作者：
Yasuhiro Horiike Yasuhiro Horiike
中科院分区：
文献类型：
--
作者：
H. Shindo;Masayoshi Konishi Masayoshi Konishi;Yasuhiro Horiike Yasuhiro Horiike
利用发射探针测量了沉积CFx聚合物的CF4/H2刻蚀等离子体中的电子温度。实验首先表明，新方法的测量结果不受探针表面沉积的影响，也不受沉积引起的等离子体漂移的影响。随着H2含量的增加，测得的电子温度迅速下降。进一步表明，用发射探针法测得的电子温度与用Hα和Hβ线强度比测定的电子温度非常一致。
A new method using an emissive probe was applied to measurement of the electron temperature in a CF4/H2 etching plasma in which the deposition of CFx polymer occurred. The experiment firstly showed that the measurement by our new method was never deteriorated by the deposition on the probe surface and was free from the influence of the deposition-induced plasma drift. The electron temperature thus measured rapidly decreased as the content of H2 was increased. It was further shown that the electron temperature obtained by the emissive probe method was very consistent with that spectroscopically determined using the Hα and Hβ line intensity ratio.