Enhanced performance of InGaN-based light-emitting diodes grown on volcano-shaped patterned sapphire substrates with embedded SiO2
Enhanced performance of InGaN-based light-emitting diodes grown on volcano-shaped patterned sapphire substrates with embedded SiO2
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DOI：
10.1039/c5ra11703h
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发表时间：
2015-08
期刊：
影响因子：
3.9
通讯作者：
Y. You;F. Chu;Hank Hsieh;Wen-Hsin Wu;M. Lee;C. Kuan;R. Lin
中科院分区：
文献类型：
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作者：
Y. You;F. Chu;Hank Hsieh;Wen-Hsin Wu;M. Lee;C. Kuan;R. Lin
本文描述了在火山形状的镶嵌有二氧化硅的蓝宝石衬底上生长的高效InGaN基发光二极管(SVPSS)。拉曼光谱和透射电子显微镜表明，由于GaN外延层的松弛压缩应变和较少的穿线位错，生长在SVPSS上的LED具有较高的内部量子效率。实验测量数据和光线跟踪模拟表明，光提取效率的提高是由于锥形气孔产生的光散射效应和镶嵌的二氧化硅导致的渐变折射率匹配。与注入电流为350 mA的传统LED相比，生长在SVPSS上的LED输出功率提高了72%。
This paper describes highly efficient InGaN-based light-emitting diodes (LEDs) grown on volcano-shaped patterned sapphire substrates with embedded SiO2 (SVPSS). Raman spectroscopy and transmission electron microscopy revealed that the LEDs grown on the SVPSS had high internal quantum efficiency resulting from relaxed compressive strain and fewer threading dislocations in the GaN epitaxial layers. Experimentally measured data and ray-tracing simulations suggested that the enhancement in the light extraction efficiency was due to the light scattering effect arising from the conical air voids and the gradual refractive index matching resulting from the embedded SiO2. Compared with a conventional LEDs operated at an injection current of 350 mA, the light output power from our LED grown on SVPSS was increased by 72%.