Carrier Transport and Improved Collection in Thin-Barrier InGaAs/GaAsP Strained Quantum Well Solar Cells
Carrier Transport and Improved Collection in Thin-Barrier InGaAs/GaAsP Strained Quantum Well Solar Cells
复制标题
薄势垒 InGaAs/GaAsP 应变量子阱太阳能电池中的载流子传输和改进的收集
DOI：
10.1109/jphotov.2012.2216858
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发表时间：
2013
影响因子：
3
通讯作者：
S. Bedair
中科院分区：
文献类型：
--
作者：
G. Bradshaw;C. Carlin;J. Samberg;N. El;P. Colter;S. Bedair
与 GaAs 匹配的多量子阱 (MQW) 晶格由与 GaAs0.24P0.76 势垒平衡的 In0.14Ga0.76As 阱组成，已用于将 GaAs 子电池的吸收扩展到更长的波长，以用于 InGaP/GaAs/Ge 三结光伏电池。具有高磷成分的薄屏障能够平衡 InGaAs 阱的应变；因此，创造条件允许更厚的井和载流子隧道主导整个结构的运输。因此，更大比例的耗尽区被吸收超过 875 nm 波长的 InGaAs 量子阱占据，并且铟成分不受热电子发射要求的限制。在高温和反向偏压下的测量表明，热辅助隧道机制负责穿过势垒的传输。
Multiple quantum wells (MQW) lattice matched to GaAs consisting of In0.14Ga0.76As wells balanced with GaAs0.24P0.76 barriers have been used to extend the absorption of GaAs subcells to longer wavelengths for use in an InGaP/GaAs/Ge triple-junction photovoltaic cell. Thin barriers with high-phosphorus composition are capable of balancing the strain from the InGaAs wells; thus, creating conditions to allow for thicker wells and for carrier tunneling to dominate transport across the structure. As a result, a larger percentage of the depletion region is occupied by InGaAs quantum wells that absorb wavelengths beyond 875 nm and the indium composition is not limited by thermionic emission requirements. Measurements at elevated temperatures and reverse bias suggest that a thermally assisted tunneling mechanism is responsible for transport through the barriers.